| PART |
Description |
Maker |
| BD650 |
(BD646 - BD652) PNP SILICON POWER DARLINGTONS
|
Bourns Electronic Solutions
|
| 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation]
http://
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS
High power NPN silicon transistor
Silicon NPN switching transistor
Silicon NPN transistor
PNP power transistor
Small signal NPN transistor
Medium power NPN silicon transistor
Dual npn-pnp complementary bipolar transistor
Complementary power transistors
NPN power transistors 模拟IC
Analog IC 模拟IC
|
RECOM Electronic GmbH
Vishay Intertechnology, Inc.
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| BUV21 BUV21_D ON0257 |
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc.
ON Semiconductor
|
| 2SD2163 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
| 2SB1431 |
Silicon power transistor
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
